Supreme commander 2 is the highest scale real-time strategy game ever made. It's a technically advanced multiplayer game with an epic campaign, tactical land and air battles, and a wide range of powerful multiplayer and co-op features.1. Field of the Invention
The present invention relates to a semiconductor device having a circuit configured by a thin film transistor (hereinafter referred to as a TFT), and a method of manufacturing the same. For example, the present invention relates to an electro-optical device typified by a liquid crystal display panel, and an electronic device including the electro-optical device as a component.
Note that a semiconductor device in this specification refers to a device in general capable of functioning by utilizing semiconductor characteristics. Electro-optical devices, semiconductor circuits, and electronic devices are all included in the category of the semiconductor device.
2. Description of the Related Art
In recent years, attention has been focused on a technique for forming a thin film transistor (TFT) by using a semiconductor thin film (having a thickness of about several nm to about several hundred nm) formed over a substrate having an insulating surface. Thin film transistors are widely used for electronic devices such as ICs and electro-optical devices. In particular, development of the TFT as a switching element for image display devices is proceeding rapidly.
Various applications utilizing such an image display device are expected, and it is demanded to establish a large-scale image display device for use in a display device such as a television set.
A structure of a general image display device is a so-called active matrix driving method in which a TFT is disposed in each of several hundred thousand to several million pixels arranged in matrix, and electric charges going in and out of a respective pixel electrode are controlled by a switching function of the TFT.
At present, in the case of manufacturing a TFT by using amorphous silicon or polycrystalline silicon, it is being tried to manufacture a TFT with higher performance by increasing the area of a channel forming region or reducing a channel forming region to a size (several nm square) equivalent to a size of a single atom.
However, with miniaturization of the TFT, a problem arises such that the electric field in the vicinity of the 0b46394aab